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Proceedings of 2009 International Workshop on Information Security and Application (IWISA 2009)

Qingdao, China, November 21-22, 2009

Editors: Feng Gao and Xijun Zhu

AP Catalog Number: AP-PROC-CS-09CN004

ISBN: 978-952-5726-06-0

Page(s): 205-208

Analysis and Simulation of Memory Effects on Microwave Power Amplifier

Jingchang Nn and Jiuchao Li

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Analysis and simulation the existence of electrical memory effects and thermal memory effects in different spacing two-tone input signal and modulated signal source through advanced design system (ADS) software simulation, respectively. Built thermal memory effects compensation circuit in the ADS environment to confirm the compensation circuit has a good compensation to the thermal memory effects. Created an adaptive digital baseband predistortion system, take the power amplifier memory model with sparse delay taps as an example, put it into the created system and system-level simulation, simulation results demonstrate the system have a good predistortion result with the memory PA model, which performance can be more close to a real system than memory-less model, and has a significant sense for designing real system.

Index Terms

power amplifier (PA), memory effects, compensation circuit, sparse delay taps

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