JOURNAL OF COMPUTERS (JCP)
ISSN : 1796-203X
Volume : 3    Issue : 5    Date : May 2008

Analysis of Block Oxide Height Variations for a 40nm Gate Length bFDSOI-FET
Jyi-Tsong Lin and Yi-Chuen Eng
Page(s): 41-45
Full Text:
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Abstract
In this paper, a novel device architecture called the fully depleted silicon-on-insulator field-effect
transistor with block oxide (bFDSOI-FET) is proposed to investigate the influence of block oxide
height (HBO) on the electrical characteristics. According to the two-dimensional (2-D) simulation
results, the characteristics of the proposed structure are similar to those of the ultra-thin (UT)
SOIFET, due to the presence of block oxide enclosed silicon body. Moreover, although the high HBO
associated with the thick silicon body results in somewhat poor device performance because of
increased charge sharing from the source/drain (S/D), the self-heating effects (SHEs) for the
bFDSOI-FET can be reduced.

Index Terms
FDSOI, block oxide, charge sharing, self-heating.