JOURNAL OF COMPUTERS (JCP)
ISSN : 1796-203X
Volume : 3 Issue : 2 Date : February 2008
Modeling of Leakage Current Mechanisms in Nanoscale DG MOSFET and its Application to Low
Power SRAM Design
Deblina Sarkar, Deepanjan Datta, and S.Dasgupta
Full Text: PDF (473 KB)
Double-Gate (DG) MOSFET has emerged as one of the most promising devices for logic and
memory circuit design in sub 10nm regime. In this paper, we investigate the gate-to-channel
leakage, EDT, BTBT and sub-threshold leakage for DG MOSFET. Simulations are performed using
2D Poisson-Schrödinger simulator with tight-binding Green’s function approach. Then we analyze
the effect of parameter variation to optimize low leakage SRAM cell using DG devices. The DG
device/circuit co-design successfully demonstrates the benefit of using metal gate intrinsic body DG
devices which significantly reduces BTBT and EDT in SRAM architecture.
Double-Gate, BTBT, sub-threshold, leakage, SRAM.