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International Journal of

Recent Trends in Engineering

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International Journal of Recent Trends in Engineering (IJRTE)

ISSN 1797-9617

Volume 1, Number 3, May 2009

Issue on Electrical & Electronics

Page(s): 186-190

Characteristics Study of Modulation Doped GaAs/InxGa1-xAs/AlxGa1-xAs based Pseudomorphic HEMT

T. R. Lenka and A. K. Panda

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The High Electron Mobility Transistor (HEMT) is a small geometry hetero-junction device that exploits the high electron mobility in an undoped region to achieve high speed operation. Hetero-junction is used to create a narrow undoped electron well which forms the channel for current flow. The electron mobility in the channel is found to be maximum due to the adequate presence of Indium quantity in the alloy. The 2DEG or so called quantum well is created because of the discontinuity in the conduction energy band. In this paper a GaAs/InxGa1-xAs/AlxGa1-xAs based HEMT is proposed and designed with TCAD tool and the DC characteristics such as IdVgs and IdVds are discussed. Various parameters such as Threshold voltages (Vtgm), Vti, Maximum drain current (Idmax), Transconductance (gm) are also extracted from the gate characteristics. Noise analysis and its comparison with MESFET is also discussed as a function of transconductance parameter.

Index Terms

HEMT, MODFET, 2DEG, TCAD, Pseudomorphic, MBE

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